Wafer and the manufacturing and reclaiming methods thereof

Details Wafer and the manufacturing and reclaiming methods thereof Wafer and the manufacturing and reclaiming methods thereof

2004-08-13

2008-10-07

Lebentritt, Michael S. (Department: 2829)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S692000, C438S455000, C438S693000, C438S745000, C438S750000, C257SE21567, C257SE21570, C257SE21209, C257SE21682, C257SE27103

Reexamination Certificate

active

07432204

ABSTRACT:
A wafer and the manufacturing and reclaiming methods thereof are disclosed. The wafer includes a semiconductor substrate and a protective layer formed on the surface of the semiconductor substrate. The reclaiming method of the wafer includes providing a wafer having a semiconductor substrate, a protective layer formed on the semiconductor substrate, and a polysilicon layer formed on the protective layer; and removing the polysilicon layer. The wafer and the reclaiming method of the wafer can prevent the substrate of the wafer from being destroyed during the reclaiming process and increase the reclaiming rate of the wafer.

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