Wafer and surface acoustic wave device

Details Wafer and surface acoustic wave device Wafer and surface acoustic wave device

1997-05-23

1998-10-13

Budd, Mark O.

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

310313A, H01L 4104

Patent

active

058216731

ABSTRACT:
A surface acoustic wave device capable of exhibiting high temperature stability and being downsized. The device includes a wafer constructed of a trigonal lanthanum/gallium silicate crystal cut out at predetermined cut angles (.alpha., .beta.). Application of a predetermined voltage signal to the wafer permits a surface acoustic wave to be excited in the wafer and propagate in the wafer. Supposing that the crystal has three crystal axes including an X-axis (electric axis), a Y-axis (mechanical axis) and a Z-axis (optical axis), the wafer is cut out so that a normal line (n) on a surface of the wafer has the cut angle .alpha. defined to be 20.degree..ltoreq..alpha..ltoreq.40.degree. with respect to the Y-axis in a counterclockwise direction from the Y-axis in a Y-Z plane and a propagation direction (S) of the surface acoustic wave has the cut angle .beta. defined to be 35.degree..ltoreq..beta..ltoreq.70.degree. with respect to the X-axis in a counterclockwise direction from the X-axis in the surface of the wafer.

REFERENCES:
patent: 5557968 (1996-09-01), Krempl et al.

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