Wafer and method of producing the same

Details Wafer and method of producing the same Wafer and method of producing the same

2011-05-31

2011-05-31

Olsen, Allan (Department: 1716)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C216S088000, C438S693000, C438S694000, C451S041000

Reexamination Certificate

active

07951716

ABSTRACT:
A wafer is produced at a step of polishing a predetermined face of a wafer to flatten the predetermined face while supplying a polishing liquid onto a bonded abrasive cloth, wherein the bonded abrasive cloth comprises a urethane bonding material consisting of a soft segment having a polyfunctional isocyanate and a hard segment having a polyfunctional polyol and having an expansion ratio of 1.1-4 times and silica having an average particle size of 0.2-10 μm and a hydroxy group, and has a given ratio of the hard segment occupied in the urethane bonding material, a given volume ratio of silica and a given Shore D hardness.

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