Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Forming a platelet shape or a small diameter – elongate,...
Patent
1995-06-26
1999-10-12
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Forming a platelet shape or a small diameter, elongate,...
117104, 117105, 117929, 427577, 423446, C30B 2904
Patent
active
059649429
ABSTRACT:
No wide bulk diamond wafer exists at present. A wide diamond-coated wafer is proposed instead of the bulk diamond wafer. Diamond is heteroepitaxially deposited on a convex-distorted non-diamond single crystal substrate by a vapor phase deposition method. In an early step, a negative bias is applied to the substrate. In the case of a Si substrate, an intermediate layer of .beta.-SiC is first deposited on the Si substrate by supplying a low carbon concentration material gas. Then the carbon concentration is raised for making a diamond film. The convex-distorted wafer is stuck to a holder having a shaft which is capable of inclining to the holder. The wafer is pushed to a turn-table of a polishing machine. The convex diamond wafer can fully be polished by inclining the holder to the shaft. A wide distorted mirror wafer of diamond is produced. Fine wire patterns can be made on the diamond mirror wafer by the photolithography.
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Patent Abstracts of Japan, vol. 16, No. 400 (C-977), Aug. 1992, re JP 04-132687.
Fujimori Naoji
Ikegaya Akihiko
Seki Yuichiro
Tanabe Keiichiro
Tsuno Takashi
Kunemund Robert
Sumitomo Electric Industries Ltd.
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