Wafer and method of producing a wafer

Details Wafer and method of producing a wafer Wafer and method of producing a wafer

1997-10-01

1999-02-23

Turner, Archene

Coating processes

Coating by vapor, gas, or smoke

Carbon or carbide coating

427255, 4272552, 427532, 427560, H01L 21461, B24B 100, C30B 2514

Patent

active

058741305

ABSTRACT:
A diamond wafer including a substrate and a (111) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (111) oriented film is produced by supplying a lower carbon concentration gas and a higher carbon concentration gas alternately. The lower carbon concentration means 0% to 1% of the atomic ratio C/H. The higher carbon concentration means 1% to 8% of the atomic ratio C/H. More than 40% of layered defects are either parallel with or slanting at an angle less than 5 degrees to the surface. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.

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