Wafer and method of producing a wafer

Details Wafer and method of producing a wafer Wafer and method of producing a wafer

1995-06-07

1998-04-07

Turner, Archene

Stock material or miscellaneous articles

Structurally defined web or sheet

Nonplanar uniform thickness material

428156, 428161, 428172, 428332, 428336, 428426, 428446, 428697, 428698, 428699, 428702, 428408, C23C 1626

Patent

active

057362262

ABSTRACT:
A diamond wafer including a substrate and a (111) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (111) oriented film is produced by supplying a lower carbon concentration gas and a higher carbon concentration gas alternately. The lower carbon concentration means 0% to 1% of the atomic ratio C/H. The higher carbon concentration means 1% to 8% of the atomic ratio C/H. More than 40% of the layered defects of the diamond film are either parallel with or slanting at an angle less than 5 degrees to the surface of the film. The wafer is monotonously distorted with a distortion height H satisfying the inequality 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.

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