Wafer

Details Wafer Wafer

1997-09-30

2000-01-11

Griffin, Steven P.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

264625, C01B 3136

Patent

active

060132361

ABSTRACT:
A wafer employing a silicon carbide sintered body is provided. The density of the silicon carbide sintered body is 2.9 g/cm.sup.3 or more. The silicon carbide sintered body is obtained by sintering a mixture in which silicon carbide powder and a non-metal-based sintering additive are mixed uniformly. The non-metal-based sintering additive is formed of an organic compound which generates carbon upon heating or the like. As a result, a wafer with excellent heat resistance and acid resistance and which causes little contamination is provided.

REFERENCES:
patent: 4788018 (1988-11-01), Yamada et al.
patent: 5298467 (1994-03-01), Hurtado et al.
patent: 5589116 (1996-12-01), Kojima et al.
patent: 5679153 (1997-10-01), Dmitriev et al.
patent: 5863325 (1999-01-01), Kanemoto et al.

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