Coherent light generators – Particular active media – Semiconductor
Patent
1981-11-19
1983-11-15
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
357 17, H01S 319
Patent
active
044160127
ABSTRACT:
The invention is an improved buried heterostructure laser wherein the improvement comprises a cladding layer which is interposed between the mesa and the burying region and has a refractive index less than that of the burying region and the effective refractive index of the fundamental transverse mode. The discrimination against higher order modes of propagation provided by the structure permits the use of a wider active layer and thus a larger emitting area.
REFERENCES:
patent: 3753801 (1973-08-01), Lookwood et al.
patent: 4048627 (1977-09-01), Ettenberg et al.
patent: 4116733 (1978-09-01), Olsen et al.
K. Shima et al., "Improvement of Photoluminescence Property of (GaAl) as Double-Heterostructure Laser with Buffer Layer", Appl. Phys. Lett., 36(6), Mar. 15, 1980, pp. 395-397.
Transverse Mode Control & Reduction of Threshold Current in (GaAl) as Buried-Heterostructure Lasers with a Buried Optical Guide by H. Nakashima et al., Japanese Journal of Applied Physics, pp. L591-L594.
Characteristics of a Doubly Clad Optical Fiber with a Low-Index Inner Cladding by S. Kawakami et al., IEEE Journal of Quantum Electronics, Dec. 1974, pp. 879-887.
Buried-Heterostructure AlGaAs Lasers by K. Saito et al., IEEE Journal of Quantum Electronics, Feb. 1980, pp. 205-215.
Botez Dan
Ettenberg Michael
Burke William J.
Cohen Donald S.
Davie James W.
Morris Birgit E.
RCA Corporation
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