Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-06-20
2006-06-20
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000
Reexamination Certificate
active
07064348
ABSTRACT:
A VVA-mode LCD having improved transmittance and response speed includes upper and lower substrates positioned to face each other with a predetermined distance between them; a liquid crystal layer having negative anisotropy of dielectric constant interposed between the upper and lower substrates; a color resin layer formed on the inner surface of the upper substrate and having a predetermined number of valleys regularly formed inside each unit pixel; a counter electrode formed on the color resin layer including the valleys; a pixel electrode formed on the inner surface of the lower substrate and having slits arranged about the valleys of the upper substrate in a “+” shape inside and around the valleys; and alignment layers interposed between the pixel electrode and the liquid crystal layer and between the counter electrode and the liquid crystal layer, respectively.
REFERENCES:
patent: 2004/0080695 (2004-04-01), Choi et al.
patent: 2004/0201790 (2004-10-01), Shin et al.
patent: 2004/0252265 (2004-12-01), Ma et al.
Choi Sang Un
Kim Sung Woon
Boe Hydis Technology Co., Ltd.
Cao Phat X.
Keefer Timothy J
Seyfarth Shaw LLP
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