Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2005-06-14
2005-06-14
Nguiyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C349S056000, C349S084000, C349S130000
Reexamination Certificate
active
06905902
ABSTRACT:
A VVA mode LCD has a liquid crystal (LC) layer of a negative dielectric anisotropy between lower and upper substrates. A pixel electrode is formed on the lower substrate. A color resin layer is formed on the upper substrate and has a V-shaped valley and jagged valleys, which are perpendicular to and shallower in depth than the V-shaped valley. A counter electrode is formed on the color resin layer and has a V-shaped valley and jagged valleys perpendicular to the V-shaped valleys. A first vertical orientation layer is formed between the pixel electrode and the LC layer. A second vertical orientation layer is formed between the counter electrode and the LC layer. First and second polarizers are attached to the outer and inner faces of the upper and lower substrates, respectively. The polarization axis of each intersects. The jagged valleys are provided to the V-shaped valleys via halftone exposure.
REFERENCES:
patent: 5610736 (1997-03-01), Asai
patent: 2003/0199114 (2003-10-01), Fukagawa
patent: 2004/0114092 (2004-06-01), Ogishima et al.
patent: 2004/0119924 (2004-06-01), Takeda et al.
Choi Sang Un
Hong Seung Ho
Ma Jung Ho
Shin Seong Wook
Boe Hydis Technology Co., Ltd.
Ladas & Parry LLP
Nguiyen Tuan H.
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