(VSIS) semiconductor laser with reduced compressive stress

Details (VSIS) semiconductor laser with reduced compressive stress (VSIS) semiconductor laser with reduced compressive stress

1983-05-25

1986-05-27

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 36, H01S 319

Patent

active

045920621

ABSTRACT:
A V-channeled substrate inner stripe (VSIS) laser is manufactured on a GaAs substrate. The VSIS laser includes p-Ga.sub.0.7 Al.sub.0.3 As active layer, and an n-Ga.sub.0.85 Al.sub.0.15 As cap layer. The GaAs substrate is removed from the final device. The n-Ga.sub.0.85 Al.sub.0.15 As cap layer functions to support the final device, and to minimize a stress applied to the p-Ga.sub.0.7 Al.sub.0.3 As active layer.

REFERENCES:
Blum, "Double-Heterojunction Lasers with Double-Side Heat Sink Design", IBM Technical Disclosure Bulletin, vol. 15, No. 11, Apr. 1973, p. 3439.

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