Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-04-30
1994-07-12
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 22, 257184, 257458, H01L 2714
Patent
active
053291360
ABSTRACT:
A tunable monolithic integrated photodetector (10) detects a selected wavelength of incident light within a wavelength range. The photodetector comprises a multiple quantum well (MQW) filter means for receiving and filtering the incident light, and an MQW detector means for receiving light from the MQW filter means and for detecting the selected wavelength. A fixed voltage bias V.sub..DELTA. is disposed between the filter means and the detector means for causing the filter means to absorb light wavelengths around the selected wavelength to thereby enhance the detectability of the selected wavelength. Further, a variable voltage bias V.sub.P is selectively and proportionally imposed on both the filter means and the detector means for permitting tuning of the photodetector. A fixed filter may also be employed for filtering the incident light so that light wavelengths which are outside the range of the photodetector are eliminated. Finally, a plurality of the photodetectors may be arranged in a two dimensional array for image processing.
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Tokuda et al., "Dual-Wavelength Multiple Quantum Well N-I-P-I-N Photodetector Using an Optically Bistable Abrupt Absorption Edge", Appl. Phys. Lett. 56(3), Jan. 15, 1990, pp. 227-228.
Wood et al., "Wavelength-selective voltage-tunable photodetector made from multiple quantum wells," Appl. Phys. Lett., vol. 47 No. 3, Aug. 1, 1985, pp. 190-192.
Larsson et al., "Tunable Superlattice p-i-n Photodectors: Characteristics, Theory, and Applications," IEEE Journal of Quantum Electronics, vol. 24, No. 5, May 1988, pp. 787-801.
AT&T Bell Laboratories
Mintel William
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