Voltage transient suppression circuit for preventing overvoltage

Details Voltage transient suppression circuit for preventing overvoltage Voltage transient suppression circuit for preventing overvoltage

1995-01-13

1998-03-24

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Amplitude control

327323, 327384, 327580, 327584, 327420, 361 18, H03K 1708, H03K 1756

Patent

active

057317291

ABSTRACT:
An apparatus for suppressing voltage transients across a first transistor is described. The first transistor has a first terminal, a second terminal, and a gate terminal, and is characterized by an avalanche breakdown voltage rating between the first and second terminals. The cathode of a first diode is coupled to the first terminal, the first diode having a reverse breakdown voltage which is less than the avalanche breakdown voltage rating. Gate driver circuitry is provided by which the gate terminal of the first transistor is coupled to the anode of the first diode. The gate driver circuitry provides a drive signal to the gate terminal of the first transistor, and comprises a plurality of bipolar transistors. Each bipolar transistor has an anode terminal (i.e., base terminal), a p-n junction, and a cathode terminal (i.e., emitter terminal). The anode terminal of each bipolar transistor is coupled to the anode of the first diode.

REFERENCES:
patent: 4423457 (1983-12-01), Brajder
patent: 4658203 (1987-04-01), Freymuth
patent: 5055721 (1991-10-01), Majumdar et al.
patent: 5304935 (1994-04-01), Rathke et al.
patent: 5444591 (1995-08-01), Chokhawala et al.
Yamazaki, T., et al., "The IGBT with Monolithic Overvoltage Protection Circuit," Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs (1993), pp. 41-45.

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