Voltage transferring device capable of holding boost voltage and

Details Voltage transferring device capable of holding boost voltage and Voltage transferring device capable of holding boost voltage and

1997-04-07

1999-02-23

Ton, My-trang Nu

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With bootstrap circuit

327537, G05F 110, G05F 302

Patent

active

058748555

ABSTRACT:
In a voltage transferring device connected between a voltage supplying section and a voltage receiving section, the voltage supplying section supplies, in a transferring period, a boost voltage having a boost level to the voltage receiving section. The voltage supplying section has, in a non-transferring period, a non-transferring voltage which has a non-transferring level smaller than the boost level. A transferring field effect transistor has a source electrode connected to the voltage supplying section and a drain electrode connected to the voltage receiving section. A controlling circuit is connected to a substrate electrode of the transferring FET. The voltage controlling circuit supplies, in the transferring period, a high voltage having the boost level to the substrate electrode of the transferring FET. The controlling circuit supplies, in the non-transferring period, a low voltage having the non-transferring level to the substrate electrode of the transferring FET. The controlling circuit comprises first and second FETs. The first FET has a drain electrode connected to the source electrode of the transferring FET and a source electrode connected to the substrate electrode of the transferring FET. The second FET has a source electrode connected to the substrate electrode of the transferring FET and a drain electrode connected to the drain electrode of the transferring FET.

REFERENCES:
patent: 4124806 (1978-11-01), Rusznyak
patent: 5502415 (1996-03-01), Matsui et al.
patent: 5521547 (1996-05-01), Tsukada

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