Voltage supply with low power and leakage current

Details Voltage supply with low power and leakage current Voltage supply with low power and leakage current

2006-12-05

2006-12-05

Callahan, Timothy P. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

C327S543000, C365S229000

Reexamination Certificate

active

07145383

ABSTRACT:
As the chip manufacturing process progresses towards making smaller and finer chip circuitry, leakage currents of different types including the subthreshold leakage current, gate tunneling leakage current and GIDL (Gate-Induced Drain Leakage) current increase. These leakage currents increase the electrical current consumption of the chip. In a semiconductor integrated circuit device comprising a circuit block having a first MOS transistor, and a leakage current control circuit having a second MOS transistor and a current source, a source and drain circuit of the second MOS transistor is formed between the power supply line of the circuit block and a voltage point where operating voltage is supplied. This current source is connected to the power supply line and in a first state, the power supply line is driven to a first voltage by the second MOS transistor, and in a second state, the power supply line is controlled at a second voltage by current flow in the current source and, the voltage applied across the source and drain of the first MOS transistor in the second state is smaller than the voltage applied across the source and drain of the first MOS transistor in the first state.

REFERENCES:
patent: 5583457 (1996-12-01), Horiguchi et al.
patent: 6091656 (2000-07-01), Ooishi
patent: 6184744 (2001-02-01), Morishita
patent: 6333571 (2001-12-01), Teraoka et al.
patent: 6414895 (2002-07-01), Kokubo et al.
patent: 6556071 (2003-04-01), Notani et al.
patent: 2003/0102903 (2003-06-01), Cho
patent: 11-195975 (1997-12-01), None
Jerry M. Soden, Charles F. Hawkins, Anthony C. Miller, “Identifying Defects in Deep-Submicron CMOS ICs”, IEEE Spectrum, Sep. 1996, pp. 66-71.
Hironori Akamatsu, Toru Iwata, Hiro Yamamoto, Takashi Hirata, Hiroyuki Yamauchi, Hisakazu Kotani and Akira Matsuzawa, “A Low Power Data Holding Circuit with an Intermittent Power Supply Scheme for sub-1V MT-CMOS LSIs”, IEEE, 1996 Symposium on VLSI Circuits Digest of Technical Papers, pp. 14-15.
Kouichi Kumagai, Hiroaki Iwaki, Hiroshi Yoshida, Hisamitsu Suzuki, Takashi Yamada and Susumu Kurosawa, “A Novel Powering-down Scheme for Low Vt CMOS Circuits”, IEEE, 1998 Symposium on VLSI Circuits Digest of Technical Papers, pp. 44-45.

Affiliated with

Also associated with

Rating

Voltage supply with low power and leakage current does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Voltage supply with low power and leakage current, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Voltage supply with low power and leakage current will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3713296