Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1981-02-24
1984-02-21
Anagnos, Larry N.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
3072383, 307449, 365203, H03K 3013, H03K 1716
Patent
active
044332572
ABSTRACT:
A MOS integrated circuit device comprises a plurality of charge retention circuit elements formed on a semiconductor substrate and a peripheral circuit having charging transistor formed on the semiconductor substrate and positioned near to the charge retention circuit elements. The device further comprises a circuit which is formed on the semiconductor substrate and which supplies a first voltage to the gate electrode of each charging transistor and a second voltage to the drain electrode of each charging transistor. The first voltage and the second voltage cooperate to make each charging transistor operate in a triode region for a predetermined time, thereby preventing the charge retention characteristics of the charge retention circuit elements from being degraded.
REFERENCES:
patent: 3805095 (1974-04-01), Lee et al.
patent: 3893146 (1975-07-01), Heeren
patent: 3898479 (1975-08-01), Proebsting
patent: 4047051 (1977-09-01), Heller
patent: 4100430 (1978-07-01), Lesser
patent: 4163245 (1979-07-01), Kinoshita
patent: 4164751 (1979-08-01), Tasch, Jr.
Anagnos Larry N.
Hudspeth David R.
Tokyo Shibaura Denki Kabushiki Kaisha
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