Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Patent
1993-10-14
2000-01-04
Cunningham, Terry D.
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
327540, 323316, G05F 110
Patent
active
060114282
ABSTRACT:
The level shifter circuit of an internal down converter includes a P channel MOS transistor constituting a resistance component, and a resistor constituting a resistance component. The temperature coefficient of resistance component is set larger than the temperature coefficient of resistance component so that the output voltage of level shifter circuit has a negative temperature characteristic. If a reference voltage generated by reference voltage generation circuit decreases when operating at a high temperature, the output voltage of level shifter circuit decreases as well. Thus, change in an internal voltage due to change in the operation temperature can be compensated.
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Watanabe, Yohji et al., "On-Chip Supply Voltage Conversion System and Its Application to a 4Mb DRAM", Conference on Solid State Devices and Materials, 1986, pp. 307-310, no month.
Hidaka, Hideto et al., "A 34-ns 16-Mb DRAM with Controllable Voltage Down-Converter", IEEE Journal of Solid-State Circuits, Jul. 1992, pp. 1020-1027.
Horiguchi, Masashi et al., "Dual-Regulator Dual-Decoding-Trimmer DRAM Voltage Lmiiter for Burn-in Test", IEEE Journal of Solid-State Circuits, Nov. 1991, pp. 1544-1549.
Hayashikoshi Masanori
Tsukude Masaki
Cunningham Terry D.
Mitsubishi Denki & Kabushiki Kaisha
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