Voltage supply circuit and semiconductor device including such c

Details Voltage supply circuit and semiconductor device including such c Voltage supply circuit and semiconductor device including such c

1999-07-15

2000-08-01

Berhane, Adolf Deneke

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

323316, 323907, 327541, G05F 316, G05F 110

Patent

active

060971800

ABSTRACT:
The level shifter circuit of an internal down converter includes a P channel MOS transistor constituting a resistance component, and a resistor constituting a resistance component. The temperature coefficient of resistance component is set larger than the temperature coefficient of resistance component so that the output voltage of level shifter circuit has a negative temperature characteristic. If a reference voltage generated by reference voltage generation circuit decreases when operating at a high temperature, the output voltage of level shifter circuit decreases as well. Thus, change in an internal voltage due to change in the operation temperature can be compensated.

REFERENCES:
patent: 4484331 (1984-11-01), Miller
patent: 4613809 (1986-09-01), Skovmand
patent: 4677369 (1987-06-01), Bowers et al.
patent: 4954769 (1990-09-01), Kalthoff
patent: 5087891 (1992-02-01), Cytera
patent: 5103158 (1992-04-01), Cho et al.
patent: 5153500 (1992-10-01), Yamamoto et al.
patent: 5249155 (1993-09-01), Arimoto et al.
patent: 5339272 (1994-08-01), Tedrow et al.
patent: 5751142 (1998-05-01), Dosho et al.
patent: 5773968 (1998-06-01), Kondo et al.
patent: 5841271 (1998-11-01), Nakayama
patent: 5912580 (1999-06-01), Kimura
patent: 5990711 (1999-11-01), Sekimoto
patent: 6008674 (1999-12-01), Wada et al.
Watanabe, Yohji et al., "On-Chip Supply Voltage Conversion System and Its Application to a 4Mb DRAM", Conference on Solid State Devices and Materials, 1986, pp. 307-310, no month.
Hidaka, Hideto et al., "A 34-ns 16-Mb DRAM with Controllable Voltage Down-Converter", IEEE Journal of Solid-State Circuits, Jul. 1992, vol. 27, No. 7, pp. 1020-1027.
Horiguchi, Masashi et al., "Dual-Regulator Dual-Decoding-Trimmer DRAM Voltage Limiter for Burn-in Test", IEEE Journal of Solid-State Circuits, Nov. 1991, vol. 26, No. 11, pp. 1544-1549.

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