Voltage stress alterable ESD protection structure

Details Voltage stress alterable ESD protection structure Voltage stress alterable ESD protection structure

1990-05-04

1991-04-23

Jackson, Jr., Jerome

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 34, 361100, H01L 2906

Patent

active

050103806

ABSTRACT:
A protection structure comprises a semiconductor substrate of a first conductivity type with a region of second conductivity type in the substrate at the surface thereof. A region of second conductivity type has disposed therein first and second regions of the second conductivity type, a third region of the first conductivity type adjacent the surface of the substrate, and a fourth region of the second conductivity type adjacent the substrate surface adjacent the third region. A shallow field region extends a distance into the region of second conductivity type between the first and second regions. A first electrical contact overlies the surface of the first region and a second electrical contact overlies the third and fourth regions. A transient-responsive means responsive to a high voltage transient applied between the terminal and the substrate for forming a transistor having an emitter electrode formed in the field layer, a base electrode formed in the region of second conductivity type, and a collector electrode formed in the substrate, and an avalanche breakdown diode formed between the emitter of the transistor and the contact is also included.

REFERENCES:
patent: 4392781 (1987-09-01), Rountree et al.
patent: 4400711 (1983-08-01), Avery
patent: 4405933 (1983-09-01), Avery
patent: 4484244 (1984-11-01), Avery
patent: 4631567 (1986-12-01), Kokado et al.
patent: 4633283 (1986-12-01), Avery
patent: 4757363 (1988-07-01), Bohm et al.
patent: 4760433 (1988-07-01), Young et al.
patent: 4811155 (1989-03-01), Kuriyama et al.
patent: 4855620 (1989-08-01), Duvvury et al.
patent: 4870530 (1989-09-01), Hurst et al.
patent: 4928157 (1990-05-01), Matsunaga et al.

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