Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1990-04-25
1992-03-03
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
363 60, 307451, 36518911, 365226, H03K 301, H03K 19094
Patent
active
050935860
ABSTRACT:
A voltage step-up circuit for a non-volatile semiconductor memory which includes a first series of an odd number of inverters (20), a second series of an even number of inverters (21), and a transmission gate (203) provided in the pre-stage inverter of each inverter series to control the potentials inputted to the p-channel and n-channel transistors of the final-stage inverter so that both the transistors are not simultaneously turned on.
REFERENCES:
patent: 4061929 (1977-12-01), Asano
patent: 4254345 (1981-03-01), Ullrich
patent: 4295062 (1981-10-01), Mihalich et al.
patent: 4311923 (1982-01-01), Luscher et al.
patent: 4563594 (1986-01-01), Koyama
patent: 4654548 (1987-03-01), Tanizawa et al.
patent: 4806802 (1989-02-01), Okitaka et al.
"On-chip High Voltage Generation in MNOS Integrated Circuits . . . ", IEEE Journal of Solid State Circuits, vol. SC-11, No. 3, '76.
"Erasable 64KB EEPROM Capable of Building a Program Power Therein", Electronic Communication Soc. Papers, vol. J66-C, No. 12, 12/83.
"5V Single-Power-Operated EAROM", Natl. Technical Report, vol. 32, No. 1, 2/86, Natl. Electric Co., Ltd.
Miller Stanley D.
Mitsubishi Denki & Kabushiki Kaisha
Roseen Richard
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