Voltage standard based on semiconductor junction offset potentia

Electricity: power supply or regulation systems – Remote sensing

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307297, 323 19, 323 22T, 323 68, G05F 158

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active

040619591

ABSTRACT:
A first junction transistor, the emitter-to-base potential (V.sub.BE) of which determines the negative-temperature-coefficient component of the standard voltage, is provided with direct-coupled collector-to-base feedback for adjusting its V.sub.BE to condition the transistor to conduct, as collector current, substantially all of an applied current that is temperature-independent or varies linearly with temperature. The positive-temperature-coefficient component of the standard voltage is developed as the difference between the offset potentials of a pair of semiconductor junctions, one of which may be the base-emitter junction of the first transistor. The negative- and positive-temperature-coefficient potentials are linearly combined to provide the standard voltage.

REFERENCES:
patent: 3430155 (1969-02-01), Harwood
patent: 3617859 (1971-11-01), Dobkin et al.
patent: 3794861 (1974-02-01), Bernacchi
patent: 3887863 (1975-06-01), Brokaw
patent: 3908162 (1975-09-01), Marley et al.
patent: 3942046 (1976-03-01), Limberg
patent: 3970876 (1976-07-01), Allen et al.

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