Voltage sensitive isolation for static logic circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307214, 307215, 307251, 307270, H03K 1908, H03K 1936, H03K 1934, H03K 1704

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active

039448487

ABSTRACT:
A static logic circuit utilizing transistors of the MOSFET type includes a high resistance load transistor, a low resistance logic network having a large self-loading capacitance, and a gating transistor connected in series between the network and the load device. The logic network controls the output voltage across a load capacitor by grounding the load transistor output for selected input data, and the gating transistor is biased to turn OFF when the voltage across the large self-loading capacitance exceeds a predetermined level, thereafter isolating the input network from the load capacitor and speeding up the output transition by decreasing the time required to charge the load capacitor.

REFERENCES:
patent: 3601627 (1971-08-01), Booher
patent: 3631261 (1971-12-01), Heimbigner
deSimone, "Low-Power MOSFET Decoder"; IBM Tech. Discl. Bull; Vol. 13, No. 1, pp. 260-261; 6/1970.
Reynolds et al., "Metal-Oxide-Semiconductor (MOS) Integrated Circuits"; Post. Off. Elect. Engrs. Jour. (G.B.), Vol. 63, pt. 2(7/1970); pp. 105-112.
West, "Practical Circuit Design Using M.O.S."; Design Electronics (p46); pp. 30-32, 37-38; 3/1971.
Fette, "Dynamic MOS -a logical choice", EDN/EEE (pub.); pp. ch(7-14); 11/15/1971.

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