Voltage sense amplifier using NMOS

Details Voltage sense amplifier using NMOS Voltage sense amplifier using NMOS

1980-07-03

1987-04-14

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307362, 307518, 365207, 365182, H03K 524, G11C 706, G11C 1140

Patent

active

046581588

ABSTRACT:
In a high-density VLSI NMOS semiconductor such as a ROM, a voltage sensing mode amplifier in the output thereof, operative to sense relatively very low input signal swing bit read signals from the ROM with relative insensitivity to fabrication process variation. The structure includes a common gate amplifier for receiving the ROM signal, a very sensitive reference voltage circuit, a two-stage differential digital switching module operative to compatively receive the common gate and voltage reference signals to effectively distinguish relatively weak bit signals as read from the high-density VLSI ROM.

REFERENCES:
patent: 3993917 (1976-11-01), Kalter
patent: 4004240 (1977-01-01), Crowle
patent: 4096402 (1978-06-01), Schroeder et al.
patent: 4277702 (1981-07-01), Hamilton et al.

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