Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1987-07-06
1988-08-02
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
307475, H03F 316
Patent
active
047616156
ABSTRACT:
A voltage repeater circuit with low harmonic distortion for loads with a resistive component has first and second N channel MOSFET transistors and a third P channel MOSFET transistor. The first transistor, whose gate electrode forms an input terminal of the circuit, has its drain electrode connected to the positive terminal of a voltage source via a constant biasing current generator and is coupled, in addition, to the gate electrode of the second transistor by a constant voltage generator and has its source electrode connected to the drain electrode of the second transistor in a circuit node which forms an output terminal of the circuit. The source electrode of the second transistor is connected to the negative terminal of the voltage source. The input terminal of the circuit is also coupled by means of a biasing and amplifying circuit with signal inversion to the gate electrode of the third transistor which has its source electrode connected to the positive terminal of the voltage source and has its drain electrode connected to the output terminal of the circuit.
REFERENCES:
"Large Swing CMOS Power Amplifier", Kevin E. Brehmer, IEEE Journal of Solid-State Circuits, vol. SC-18, No. 6, Dec. 1983, pp. 624-629.
"MOS Operational Amplifier Design-A Tutorial Overview", Paul R. Gray, IEEE Journal of Solid-State Circuits, vol. SC-17, No. 6, Dec. 1982, pp. 969-982.
Danilovic et al., "Voltage Stabilization of the Source-Follower Operating Point", Electronic Engineering, Feb. 1969, pp. 221-223.
Maloberti Franco
Torelli Guido
Mullins James B.
SGS Microelettronica SpA
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