Voltage regulation system for a multiword programming of a...

Details Voltage regulation system for a multiword programming of a... Voltage regulation system for a multiword programming of a...

2006-11-21

2006-11-21

Elms, Richard (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185190, C365S189090

Reexamination Certificate

active

07139197

ABSTRACT:
The invention relates to a voltage regulation system for multiword programming in non volatile memories, for example of the Flash type, with low circuit area occupation, wherein memories comprise at least a memory cell matrix organized in cell rows and columns and with corresponding circuits responsible for addressing, decoding, reading, writing and erasing the memory cell content. The memory cells have drain terminals connected to matrix columns and are biased in the programming step with a predetermined voltage value by means of program load circuits associated to each matrix column. In parallel with each program load circuit, a conduction-to-ground path is enabled by a controlled active element.

REFERENCES:
patent: 5852578 (1998-12-01), Hoang
patent: 6292398 (2001-09-01), Pasotti
patent: 6434051 (2002-08-01), Endo
patent: 6603681 (2003-08-01), Micheloni et al.
patent: 2004/0170061 (2004-09-01), Micheloni et al.
patent: 2004/0170062 (2004-09-01), Micheloni et al.
European Search Report, EP 03 42 5133, dated Jul. 24, 2003.

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