Voltage reference and supply voltage level detector circuits...

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Reexamination Certificate

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Details

C327S512000, C327S513000

Reexamination Certificate

active

08072259

ABSTRACT:
N-channel field effect transistor Proportional To Absolute Temperature (N-PTAT) cells are connected to a first supply voltage and P-channel field effect transistor Proportional To Absolute Temperature (P-PTAT) cells are connected to a second supply voltage. A coupling circuit connects at least one of the N-PTAT cells to at least one of the P-PTAT cells. These circuits can be used to provide a voltage reference and/or a supply voltage level detector. Related operating methods are also described.

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patent: 5798669 (1998-08-01), Klughart
patent: 7262649 (2007-08-01), Sobue
patent: 7589580 (2009-09-01), Lee et al.
patent: 2006/0125547 (2006-06-01), Maymandi-Nejad et al.
Maxim Integrated Products/Dallas Semiconductor “I2C Serial Real-Time Clock” Datasheet DS1339, Rev: 092006, downloaded from http://datasheets.maxim-ic.com/en/ds/DS1339-DS1339U.pdf (2006).
Pease “The Design of Band-Gap Reference Circuits: Trials and Tribulations”Proceedings of the IEEE 1990 Bipolar Circuits and Technology Meeting, Minneapolis, MN, Sep. 17-18, 1990, pp. 214-218.
Sansen et al. “A CMOS Temperature-Compensated Current Reference”IEEE Journal of Solid State Circuits23(3):821-824 (1988).
Vittoz et al. “A Low-Voltage CMOS Bandgap Reference”IEEE Journal of Solid-State CircuitsSC-14(3):573-577 (1979).

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