Voltage programmable link having reduced capacitance

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257529, 257538, 257532, 365 94, 365 96, H01L 2900, G11C 1700

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active

055571379

ABSTRACT:
A voltage programmable link structure reduces parasitic capacitance by using ion implantation. The voltage programmable link structure includes a first conductive element placed over a substrate. A transformable insulator is deposited over the first conductive element. The transformable insulator material is deposited with an ion implanted layer. A second conductive element is deposited over the ion implanted layer. An electrical path is formed between the first and second conductive elements by applying a voltage between the elements across at least one region of the insulator, such that the insulating material is transformed and rendered conductive to form an electrical signal path.

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