Voltage non-linear resistor, method for manufacturing the...

Compositions – Electrically conductive or emissive compositions – Carbide containing

Reexamination Certificate

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C252S06230C

Reexamination Certificate

active

06875376

ABSTRACT:
A voltage non-linear resistor which makes a SiC-based varistor exhibiting low apparent relative dielectric constant and the voltage nonlinearity coefficient α at the same level as ZnO-based varistors is provided. The voltage non-linear resistor includes semiconductive SiC particles doped with an impurity, each of the semiconductive SiC particles having an oxide layer formed on the surface thereof. The oxide layer has a thickness in the range of about 5 to 100 nm and has aluminum diffused therein. A method for making the voltage non-linear resistor and a varistor using the same are also provided.

REFERENCES:
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patent: 2916460 (1959-12-01), Van der Beck, Jr.
patent: 4086559 (1978-04-01), Knippenberg et al.
patent: 4147572 (1979-04-01), Vodakov et al.
patent: 4502983 (1985-03-01), Omori et al.
patent: 5972801 (1999-10-01), Lipkin et al.
patent: 6025289 (2000-02-01), Carter et al.
patent: 6157290 (2000-12-01), Glatz-Reichenbach et al.
patent: 6507105 (2003-01-01), Yamagata et al.
patent: 41-2505 (1941-02-01), None
patent: 31-3077 (1954-03-01), None
Copy of Japanese Examination Report dated May 11, 2004 (and English translation of same).

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