Voltage-matched, monolithic, multi-band-gap devices

Details Voltage-matched, monolithic, multi-band-gap devices Voltage-matched, monolithic, multi-band-gap devices

2006-08-22

2006-08-22

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S081000, C257S086000, C257S104000

Reexamination Certificate

active

07095050

ABSTRACT:
Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a sting of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

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