Voltage level shifting depletion mode FET logical circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307443, 307448, 307481, 307246, H03K 19017

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active

046635432

ABSTRACT:
A GaAs D-MESFET logic system having a low power delay product has a switching second and a voltage level shifting section. The voltage level shifting section consists of a chain of diodes and a pulldown transistor. The switching section consists of an array of D-MESFETs which acts to speed up operation of a coupling capacitor. The low power dissipation of known capacitor coupled D-MESFET logic is thus preserved, while reducing gate delay.

REFERENCES:
patent: 3845324 (1974-10-01), Feucht
patent: 4558235 (1985-12-01), White et al.
patent: 4574209 (1986-03-01), Lade et al.
Mead and Conway, Introduction to VLSI Systems, Addison-Wesley Pub. Co., Reading, Mass., Oct. 1980, pp. 17-18.
Zuleeg et al., "Femtojoule High-Speed Planar GaAs E-JFET Logic", IEEE T.E.D., vol. ED-25, No. 6, Jun. 1978, pp. 626-639.
Furman et al., "Inverter Driver with Improved Performance", IBM TDB, vol. 23, No. 8, Jan. 1981, p. 3612.

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