Voltage level shifter

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185240, C365S185110

Reexamination Certificate

active

06947328

ABSTRACT:
A high-speed voltage level shifter. A transistor (10) may be connected to high voltage (VPP) and may act as a source of a limited current to a first node (21), and a driver (14, 15) connected to the first node may provide a level-shifted output signal (VOUT) to a memory control input line of a memory cell (6). A plurality of series-connected transistors (12A–12N) may be connected between a second node (22A) and a circuit ground, each transistor may have an input connected to a corresponding control signal (VIN-A to VIN-N) from a control circuit (5). A transistor (11) may be connected between the first node and the second node in a source-follower configuration and may have an input connected to a bias voltage (VBIAS) which may limit the voltage at node22A, so transistors12A–12N may be low-voltage, high speed transistors.

REFERENCES:
patent: 5392253 (1995-02-01), Atsumi et al.
patent: 5784315 (1998-07-01), Itoh
patent: 6400206 (2002-06-01), Kim et al.
patent: 6727729 (2004-04-01), Brooks et al.
patent: 6819620 (2004-11-01), Lin et al.

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