Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-07-05
2011-07-05
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S196000, C365S207000, C365S189090, C365S210120
Reexamination Certificate
active
07974134
ABSTRACT:
In a non-volatile memory system, a voltage generator provides a voltage to a gate of a voltage-setting transistor which is used in a sense circuit to set an initial voltage at a sense node. At the end of a sense period, a final voltage of the sense node is compared to a trip point, which is the threshold voltage of a voltage-sensing transistor. To account for temperature variations and manufacturing process variations, the voltage generator includes a transistor which is matched to the voltage-setting transistor, and a transistor which is matched to the voltage-sensing transistor. As a result, a voltage swing between the initial voltage and the trip point is constant, even as the initial voltage and trip point vary. In a particular implementation, the voltage generator uses a cascode current mirror circuit, and receives a reference current from a band gap voltage circuit.
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Casdode Current Mirror, RF, RFIC & Microwave Theory, Design, 10 pages, www.ific.co.uk, printed Nov. 3, 2009.
Chu Alexander
Lee Seungpil
Mui Man
Park Jong
Zhang Fanglin
Le Thong Q
SanDisk Technologies Inc.
Vierra Magen Marcus & DeNiro LLP
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