Static information storage and retrieval – Powering
Reexamination Certificate
2006-10-17
2006-10-17
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Powering
C365S194000, C365S189030
Reexamination Certificate
active
07123536
ABSTRACT:
A voltage generation control circuit of a semiconductor memory device and method thereof are provided. A period tD, which is delayed for a given time after an internal row active time (tRAS) is secured since an active command is input, is set as an active operating period. An internal latency period, a burst length period and a latency delay period tDLT are set as a read/write operating period after a read/write command is input. A period tDRP delayed for a given time after a precharge command is input is set as a precharge operating period. In this state, a voltage generator is controlled to generate an active voltage only in the operating periods.
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Hynix / Semiconductor Inc.
Le Thong Q.
Marshall & Gerstein & Borun LLP
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