Voltage generating circuit using a Schottky barrier diode

Details Voltage generating circuit using a Schottky barrier diode Voltage generating circuit using a Schottky barrier diode

1990-01-11

1991-05-07

Beha, Jr., William H.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

3073172, 307458, 323907, G05F 322

Patent

active

050139991

ABSTRACT:
A temperature-compensated voltage generating circuit suited for an output stage of a logical circuit is provided. The voltage generating circuit includes a bipolar transistor, a first resistor connected between the collector and the base of the bipolar transistor and a series circuit including a second resistor and a Schottky barrier diode and connected between the base and the emitter of the bipolar transistor. The temperature dependency of the base-emitter forward voltage of the bipolar transistor is offset by the temperature dependency of the forward voltage of the Schottky barrier diode by having the ratio of the resistances of the first and second resistors set based on a predetermined formula.

REFERENCES:
patent: 4037115 (1977-07-01), Lee
patent: 4400635 (1983-08-01), Mazgy
patent: 4542331 (1985-09-01), Boyer
patent: 4956567 (1990-09-01), Hunley et al.

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