Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-11-06
2007-11-06
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE25006, C257S532000, C257S534000, C257S690000, C257S777000, C361S301400, C361S306200
Reexamination Certificate
active
10875022
ABSTRACT:
The invention proposes an interposer assembly architecture for noise suppression circuits on the package of a CPU or high power, high frequency VLSI device. In this architecture, charge is stored on dedicated capacitors at a voltage substantially higher than the operating voltage of the VLSI device. These capacitors are mounted upon active circuits that are packaged to match the size and form factor of the capacitors and this assembly is then attached to the package substrate. Charge is conveyed from the capacitor terminals on the backside of the packaged active circuits chip. Depending upon the capacitor construction, these terminals may either be double-sided contact terminals along the edge of the active device's package, or may be feed-through contacts. The active device attaches to the package substrate through both edge terminals and terminals built-up on the surface of the chip, increasing it's number of electrical pathways into the package substrate, matching the package substrate interconnect and reducing the electrical impedance of the charge flow path. The circuits within the active device may be any combination of semiconductor switches and/or voltage regulators, and may also contain voltage and current sensing circuitry.
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Chu Chris C.
Parker Kenneth
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