Voltage driver for a memory

Details Voltage driver for a memory Voltage driver for a memory

2001-08-31

2002-09-10

Hoang, Huan (Department: 2818)

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

C365S185230, C365S185080

Reexamination Certificate

active

06449211

ABSTRACT:

TECHNICAL FIELD
This invention relates to a voltage driver for a memory.
BACKGROUND
Voltage “snap-back” is a phenomenon that occurs when the drain voltage of an N-channel transistor is high and the gate voltage of the transistor switches from low voltage to a higher voltage. During snap-back, ionization current from the N-channel transistor flows into the transistor substrate. This causes the substrate to bias upwards, which forward biases the drain-source junction causing more current to flow through the transistor into the substrate. This positive feedback effect can destroy the transistor.
One method of eliminating snap-back includes increasing the N-channel length of the transistor. This method affects the transistors speed of operation, requiring an increase in its channel width to maintain a constant speed. Increasing the channel width, however, increases the size of the transistor. This is problematic when chip space is limited.


REFERENCES:
patent: 5467032 (1995-11-01), Lee
patent: 5473563 (1995-12-01), Suh et al.
patent: 5787037 (1998-07-01), Amanai

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