Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with other solid-state active device in integrated...
Patent
1998-07-14
2000-11-14
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with other solid-state active device in integrated...
257177, 257174, 257531, H01L 2974, H01L 31111
Patent
active
061473685
ABSTRACT:
A voltage-driven power semiconductor device includes a voltage-driven IEGT chip, a collector electrode plate, an emitter electrode plate, and an inductance material. The collector electrode plate is connected to the collector of the IEGT chip, and press-contacts the IEGT chip from its collector side. The emitter electrode plate press-contacts the IEGT chip from its emitter side. The inductance material has an inductance component and connects the emitter of the IEGT chip and the emitter electrode plate. In the voltage-driven power semiconductor device having this arrangement, an induced electromotive force is generated in the inductance material arranged between the emitter of the IEGT chip and the emitter electrode plate. This induced electromotive force can suppress a steep current change (di/dt) upon an OFF operation, and can further suppress a steep voltage change (dv/dt) caused by the current change (di/dt).
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Hasegawa Shigeru
Hiyoshi Michiaki
Iwano Yoshinoro
Kitagawa Mitsuhiko
Kon Hironobu
Guay John
Kabushiki Kaisha Toshiba
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