Voltage dividing integrated circuit device

Details Voltage dividing integrated circuit device Voltage dividing integrated circuit device

1978-01-31

1980-07-08

Larkins, William D.

357 42, 357 48, 357 86, 357 89, H01L 2704

Patent

active

042120250

ABSTRACT:
In a first conductivity type semiconductor substrate a plurality of second conductivity type regions are formed. First conductivity type resistivity regions are formed in the second conductivity type regions, respectively. The first conductivity type resistive regions are connected in series between power source terminals, through at least one divided potential taking-out electrode.

REFERENCES:
patent: 4034395 (1977-07-01), Abdelrahman
patent: 4070653 (1978-01-01), Rao et al.
RCA Cos/Mos I.C. Manual, (RCA, Somerville, N. J., 1971), pp. 25, 146-147.

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