Voltage divider including a tapped resistor diffused in semicond

Details Voltage divider including a tapped resistor diffused in semicond Voltage divider including a tapped resistor diffused in semicond

1979-06-08

1981-01-13

Albritton, C. L.

Electrical resistors

Tapered element

357 51, H01C 308

Patent

active

042452090

ABSTRACT:
A resistor is formed in a monocrystalline silicon substrate by the diffusion of impurities to a substantially constant depth in an elongate surface zone with metallized opposite ends constituting terminals for the passage of a current therethrough. The zone is relatively narrow in the vicinity of these terminals and broadens at an intermediate location to form a corner or a bulge on one side of its longitudinal median. Several taps, in the form of branches of like conductivity transverse to the lateral boundary of the zone, are spacedly disposed along that corner or bulge at and near a region in which the cross-sectional area of the zone is a maximum and its resistance per unit length, measured at the median, is lowest; thus, the potential difference between the metallized extremities of any two adjoining taps is a small fraction of the overall voltage drop between the terminals.

REFERENCES:
patent: 3666995 (1972-05-01), Wensink et al.
patent: 4181878 (1980-01-01), Murari et al.

Affiliated with

Also associated with

Rating

Voltage divider including a tapped resistor diffused in semicond does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Voltage divider including a tapped resistor diffused in semicond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Voltage divider including a tapped resistor diffused in semicond will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2233631