Patent
1991-05-14
1992-07-28
Prenty, Mark V.
357 42, 357 51, H01L 2702
Patent
active
051344564
ABSTRACT:
A voltage divider comprises a string of resistive elements implemented by an elongated n-type impurity region formed in a lightly doped p-type semiconductor substrate, and n-channel type switching transistors with a short channel length formed in a heavily doped p-type well in the semiconductor substrate and associated with the resistive elements for coupling one of the associated resistive elements to an output node, wherein the ligthly doped semiconductor substrate decreases a parasitic capacitance coupled to the elongated n-type impurity region so that the string of the resistive elements is improved in propagation speed and a bias dependency.
NEC Corporation
Prenty Mark V.
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