Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2007-06-12
2007-06-12
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S409000
Reexamination Certificate
active
10682323
ABSTRACT:
An integrated circuit includes a die having a device layer. An insulating layer is disposed over the device layer. A die street defines the outermost bounds of the die. A voltage divider network including a plurality of resistive elements derives a plurality of predetermined bias voltages. A field plate termination includes a plurality of field plates disposed on the oxide layer and are laterally spaced apart relative to each other and relative to the die street. Each of the plurality of field plates is electrically connected to a corresponding bias voltage. The bias voltage applied to a given field plate is determined by and increases with the proximity of that field plate relative to the die street.
REFERENCES:
patent: 5382825 (1995-01-01), Neilson
patent: 6246101 (2001-06-01), Akiyama
patent: 6525390 (2003-02-01), Tada et al.
patent: 2001/0004124 (2001-06-01), Noda et al.
Czeck Bernard J.
Lange Douglas J.
Reichl Dwayne S.
Yedinak Joseph A.
Dickey Thomas L.
Fairchild Semiconductor Corporation
FitzGerald Esq. Thomas R.
Hiscock & Barclay LLP
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