Voltage-dependent resistor and method of making the same

Details Voltage-dependent resistor and method of making the same Voltage-dependent resistor and method of making the same

1977-11-16

1979-09-25

Padgett, Benjamin R.

Compositions

Electrically conductive or emissive compositions

Radioactive material containing

252518, 252519, 252520, 252521, H01B 108

Patent

active

041690710

ABSTRACT:
A voltage-dependent resistor comprising a sintered body comprising ZnO as a major part and additives wherein at least 10 weight percent of the ZnO is composed of ZnO grains having a grain size in the range from 100 to 500 microns; and method of making the same wherein the starting mixture comprises ZnO grains having a grain size in the range from 20 to 200 microns. This voltage-dependent resistor has both a low C-value and a high surge energy withstanding capability. It also has a low leakage current at a high temperature due to the addition of an antimony component as a spinel type polycrystalline Zn.sub.7/3 Sb.sub.2/3 O.sub.4.

REFERENCES:
patent: 3962144 (1976-06-01), Matsurra et al.
patent: 4003855 (1977-01-01), Wong
patent: 4028277 (1977-07-01), Matsuura et al.

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