Voltage-dependent non-linear resistance ceramic composition

Compositions – Electrically conductive or emissive compositions – Metal compound containing

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252521, 501136, 501137, 501138, 501139, H01B 108, C03C 3546

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active

048972193

ABSTRACT:
It is a voltage-dependent non-linear resistance ceramic composition comprising SrTiO.sub.3 as host material, Dy.sub.2 O.sub.3 or Dy.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 and Nb.sub.2 O.sub.5 as accelerating agent for semiconductorization, thereby changing crystal to a low resistance, and changing crystal boundary to a high resistance.
In case Dy.sub.2 O.sub.3 or Dy.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 are used as the accelerating agent for semiconductorization, one kind or more selected from the group consisting of Na, K, Ca, Cd, In, Ba, Pb, Ag, Ce, La, Sc, Y, Cs, Au, Mg, Zr, Sn, Sb, W, Bi, Ni, Fe, Ga, Pt, Tl, Al, Si, Be, Li, Eu, Gd, Tb, Tm, Lu, Th, Ir, Os, Hf and Ru. Alternatively, in case Ta.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 and Nb.sub.2 O.sub.5 are used as the accelerating agent for semiconductorization, one kind or more selected from the group consisting of Na, K, Ca, Cd, In, Ba, Pb, Mg, Zr, Sn, Sb, W, Bi, Eu, Gd, Tb, Tm, Lu, Th, Ir, Os, Hf, Ru, Ga, Pt, Tl, La, Sc, Y, Cs, and Au.
As a result, baristor characteristic is obtainable by means of the high resistance at crystal boundaries and capacitor between crystal granules--crystal boundary--crystal granule.
From this matter, an element having both functions of the baristor characteristics and the capacitor characteristics are obtainable, and performs effect in surge absorption and noise elimination.

REFERENCES:
patent: 3268783 (1966-08-01), Saburi
patent: 4403236 (1983-09-01), Mandai et al.

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