Voltage controlled variable capacitor and oscillator using it

Details Voltage controlled variable capacitor and oscillator using it Voltage controlled variable capacitor and oscillator using it

1989-12-26

1990-11-27

Grimm, Siegfried H.

Oscillators

Solid state active element oscillator

Transistors

331116R, 331116FE, 331158, 331177V, 357 236, H03B 536, H03J 318, H01L 2994

Patent

active

049739220

ABSTRACT:
A voltage variable capacitor (VVC) having two terminals in a variable frequency crystal oscillator integrated into a common substrate with the oscillator circuitry and isolated therefrom. The VVC is constructed using the same processing steps as the oscillator circuitry and achieves low series resistance and wide capacitance variation by utilizing a substrate or epitaxial layer (body) having a well with a diffused region therein. The region, of the same conductivity type as the well and a first one of the two terminals, forms a rectangular ring in the well. Over the region and insulated therefrom, a conductive layer is deposited to provide a second one of the two terminals. Both terminals are electrically isolated from the body.

REFERENCES:
patent: 4458215 (1984-07-01), Huang et al.
patent: 4518930 (1985-05-01), Rozema et al.
patent: 4626881 (1986-12-01), Kishi et al.
"High-Sensitivity MOS Varactor", P. R. S. Rao, K. N. Bhat and K. R. Rao, Solid-State Electronics, vol. 29, No. 11, pp. 1137-1144, 1986.
"A Frequency Adjustable Ultra-Compact, High-Performance Quartz Crystal Oscillator and its Simple Temperature Compensation Method", O. Ochiai, F. Tamura and Y. Mashimo, Seiko Electronic Components Ltd., 40th Annual Frequency Control Symposium-1986.
"Ideal MOS Curves for Silicon", A. Goetzberger, The Bell System Technical Journal, Sep. 1966, pp. 1097-1099 and pp. 1100-1122.
"Device Electronics for Integrated Circuits", Richard S. Muller and Theodore I. Kamins, John Wiley & Sons, N.Y., 1977, pp. 314-317 and 344.
"Device Electronics for Integrated Circuits", (Muller & Kamins), Solutions Manual prepared by K. C. Hsieh, J. H. Kim, B. Y. Liu, p. 99.

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