Voltage controlled variable capacitance device

Electricity: electrical systems and devices – Electrostatic capacitors – Variable

Reexamination Certificate

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Details

C361S280000

Reexamination Certificate

active

06999296

ABSTRACT:
A P type substrate is provided on a surface thereof with varactor elements. The varactor element has an N well formed on the surface of the P type substrate, and a gate insulating film is formed on the N well, with a polysilicon layer formed further thereon. On the other hand, the varactor element has an N well formed on the surface of the P type substrate, and a gate insulating film, greater than the gate insulating film in thickness, is formed on the N well. The polysilicon layer is then formed on the gate insulating film. Furthermore, the polysilicon layer is connected to a gate terminal, while the N well is connected to an S/D terminal via N+diffusion layers.

REFERENCES:
patent: 6212056 (2001-04-01), Gammel et al.
patent: 2002/0074589 (2002-06-01), Benaissa et al.
patent: 2003/0085449 (2003-05-01), Adler
patent: 2002-43872 (2002-02-01), None

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