Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Patent
1993-05-28
1994-11-29
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
257107, 257128, 257497, H01L 2990, H01L 29747
Patent
active
053692918
ABSTRACT:
A voltage controlled thyristor includes an intrinsic layer of material between an anode and a cathode and a gate region between the intrinsic layer and the cathode comprising a lightly doped P type layer with more heavily doped P type regions extending through the lightly doped layer into the intrinsic layer. The more heavily doped P type regions are interspersed among shallower N doped regions of the cathode. In a preferred embodiment, interdigitated ohmic contacts are formed on one surface to the N doped cathode regions and the P doped regions of the control gate. In a preferred embodiment, the anode and cathode emitters have a porous construction in which a lightly doped layer or region has a more heavily doped region or regions therein.
REFERENCES:
patent: 4587547 (1986-05-01), Amemiya et al.
patent: 4935798 (1990-06-01), Nishizawa et al.
Arnould, "Dispositifs De Puissance Dipolaires Rapid A Porteurs De Duree De Vie Tres Elevee," Journees Electronique De Puissance De Futur, Bordeaux, Jun. 1-3, 1988.
Schlangenotto, "Improved Recovery of Fast Power Diodes with Self-Adjusting p Emitter Efficiency," IEEE Electron Device Letters, vol. 10, No. 7, Jul. 1989, pp. 322-324.
Shimizu, "High-Speed Low-Loss p-n Diode Having a Channel Structure," IEEE Transactions on Electron Devices, vol. ED-31, No. 9, Sep. 1984, pp. 1314-1319.
Mehrotra, "Comparison of High Voltage Power Rectifier Structures," 5th International Symposium on Power Semiconductor Devices and IC's, 0-7803-1313-5/93/0000-0199/$3.00.COPYRGT.1993 IEEE, pp. 199-204.
James Andrew J.
Kelley Nathan K.
Sunpower Corporation
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