Voltage controlled oscillator

Oscillators – Ring oscillators

Reexamination Certificate

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C331S1170FE, C330S253000

Reexamination Certificate

active

06710667

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a voltage controlled oscillator formed of a semiconductor integrated circuit having an advantage of high-speed oscillation.
2. Description of Related Art
In recent years, voltage controlled oscillators have been used in general equipment containing PLL (Phase Locked Loop) circuits, for example, used for an oscillator frequency control in automatic frequency control device, a satellite tracking receiver in signal tracking device, a frequency modulated signal demodulation device (FM receiver), a carrier regeneration control, a pulse synchronization control and a timing extraction in narrow band selecting device, multiplication frequency generation in industrial/consumer electronic equipment, and especially, a frequency synthesizer in mobile communication equipment, then the demand for them is further growing.
FIG. 10
is a circuit diagram showing a differential circuit used in a conventional voltage controlled oscillator, and
FIG. 11
is an equivalent circuit diagram showing the same conventional differential circuit. In these figures, reference numeral
1
denotes a differential circuit, reference signs M
1
and M
2
denote PMOS transistors and reference signs M
3
, M
4
and M
5
denote NMOS transistors.
The differential circuit
1
in
FIG. 10
is used for a VCO (voltage controlled oscillator) in which to achieve a high-speed oscillation frequency is required, and it is disclosed by Ian A. Young et al. (“A PLL Clock Generator with five to ten 100 MHz of Lock Range for Microprocessors” IEEE JSSC, Vol. 27, No. 11, November 1992). To sources of the transistors M
1
and M
2
a voltage of power supply Vcc is supplied and a bias voltage Vp is applied to gates of the transistors M
1
and M
2
. A drain of the transistor M
1
is connected to a drain of the transistor M
3
, and a differential output Vo+ is output from this connection point. Further, a drain of the transistor M
2
is connected to a drain of the transistor M
4
, and a differential output Vo− is output from this connection point. A differential input Vi+ is input to a gate of the transistor M
3
and a differential input Vi− is input to a gate of the transistor M
4
. Sources of the transistors M
3
and M
4
are connected to a drain of the transistor M
5
, a bias voltage Vn is applied to a gate of the transistor M
5
and a source thereof is connected to a ground GND.
A voltage controlled oscillator consists of a plurality of differential circuits
1
which are concatenated in a ring shape and includes a voltage control unit
2
for controlling the bias voltages Vp and Vn which are applied to these differential circuits
1
. One example of the voltage controlled oscillator (ring oscillator) consisting of the differential circuits
1
is shown in the equivalent circuit diagram of FIG.
12
.
Next, an operation will be discussed.
The bias voltage Vp are so applied to the transistors M
1
and M
2
that the transistors M
1
and M
2
operate in a linear region to be used as resistor Rp, and the bias voltage Vn is so applied to the transistor M
5
that the transistor M
5
operates in a saturation region to be used as a current source. At this time, in the differential circuit
1
, parasitic capacitance Cm are present at output points on the drain sides of the transistors M
1
and M
2
(apparently as viewed from the side of the circuit outputs). In order for the differential circuit
1
to perform a stable oscillation, the bias voltages Vp and Vn should be so set that the oscillation amplitude Vosc always satisfies the following equation (1):
Vosc=Itail×Rp
  (1)
(where Itail denotes a current value of the current source transistor M
5
)
A differential circuit performs a more stable operation than an inverter circuit even if the oscillation amplitude is small and therefore has the advantage of high speed and low jitter. If still higher speed is required, however, when the parasitic capacitance Cm which are apparently present as viewed from the side of the output points (outputs Vo+ and Vo−) become larger, the parasitic capacitance Cm increases the transfer delay time as gate-drain feedback capacitance (mirror capacitance) to have an ill effect on the oscillation amplitude, thereby putting a limitation on an available oscillation frequency of this circuit.
SUMMARY OF THE INVENTION
The present invention is intended to solve the above described problem and it is an object of the present invention to provide a voltage controlled oscillator capable of responding to a speedup in oscillation frequency by suppressing the parasitic capacitance.
A voltage controlled oscillator according to one aspect of the present invention, it is characterized by that the resistance elements are formed of a plurality of transistors as a plurality of resistance elements connected in series to one another; and a resistance element among the resistance elements provided on a side of output point of the differential circuit are formed of transistors having a small transistor size.
A voltage controlled oscillator according to another aspect of the present invention, it is characterized by that the resistance elements include a first resistance element, a second resistance element and a third resistance element which are connected in series to one another and formed of respective transistors; the transistors forming the second and third resistance elements are biased into a linear region deeper than that of the transistor forming the first resistance element; and the third resistance element provided on the side of output point of the differential circuit is formed of transistors having a small transistor size.


REFERENCES:
patent: 6114907 (2000-09-01), Sakurai
patent: 6396357 (2002-05-01), Sun et al.
patent: 6-85536 (1994-03-01), None
Ian A. Young, et al., “A PLL Clock Generator with 5 to 110 MHZ of Lock Range for Microprocessors”, IEEE Journal of Solid-State Circuits, vol. 27, No. 11, Nov. 1992, pp. 1599-1606, Institute of Electrical and Electronics Engineers (IEEE), New York, NY.

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