Voltage controlled integrated circuit for biasing an RF device

Details Voltage controlled integrated circuit for biasing an RF device Voltage controlled integrated circuit for biasing an RF device

1993-01-29

1994-09-06

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including temperature compensation means

307310, H03F 130

Patent

active

053451929

ABSTRACT:
The present invention is directed to a voltage controlled single-package integrated circuit device, capable of thermal compensation, for biasing a quasi-linear bipolar device. The bias circuit also provides a low impedance source to a RF device so that the bias point does not dynamically change with the RF signal, thus improving linearity. Changes in the base-emitter voltage level of the RF device are monitored by a reference diode to provide automatic temperature compensation. The reference diode is in close thermal proximity to the RF device, allowing for accurate thermal tracking. The base-emitter voltage may be electronically adjusted by means of a control voltage input, such being suitable for hook-up to a computer system having a digital to analog convertor thereby allowing for fine voltage adjustments. The control voltage may also be used to adjust the class of operation of the RF device or provide external temperature control.

REFERENCES:
patent: 3781699 (1973-12-01), Sakamoto
patent: 4042886 (1977-08-01), Hanna
patent: 4591743 (1986-05-01), Kung
patent: 4602208 (1986-07-01), Hines
Electronics/ Mar. 3, 1977 Self-Stabilizing Op Amp Has Low Temperature Coefficients p. 116 By Joseph M. Gorin.

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