Voltage controlled high-frequency attenuator

Details Voltage controlled high-frequency attenuator Voltage controlled high-frequency attenuator

1988-03-07

1989-06-13

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including gain control means

330145, H03G 330

Patent

active

048396117

ABSTRACT:
A continuously variable, passive attenuator including a signal path between an attenuator input node and an attenuator output node, the signal path including a passive resistive element connected between the input and output nodes, and a semiconductor element having a first terminal connected to the resistive element, a second terminal connected to a reference voltage, and a third terminal connected to a control signal node, the resistance of the semiconductor element between the first and second terminals being continuously variable as a function of the value of a control signal provided to the third terminal, the capacitance of the semiconductor element always being lessw than 4 pf.

REFERENCES:
Tajima et al., "GaAs Monolithic Wideband (2-18 GHz) Variable Attenuators", 1982 IEEE MTT-S Digest, pp. 479-481.
"FETs as Voltage-Controlled Resistors", Siliconix, Inc., Santa Clara, CA 95054 (1986), pp. 7-75 to 7-83.
Product Sheet for Topaz Semiconductor CDG4469.
"DMOS FET Analog Switches and Switch Arrays", Siliconix, Inc., Santa Clara, CA 95054 (1986), pp. 7-92 to 7-99.

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