Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2006-12-05
2006-12-05
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S121000, C257S107000, C257S110000, C257S122000, C257S123000, C257S120000, C257S157000
Reexamination Certificate
active
07145185
ABSTRACT:
The invention concerns a voltage-controlled triac-type component, formed in a N-type substrate (1) comprising first and second vertical thyristors (Th1, Th2), a first electrode (A2) of the first thyristor, on the front side of the component, corresponding to a first N-type region (6) formed in a first P-type box (5), the first box corresponding to a first electrode (A2) of the second thyristor, the first box containing a second N-type region (8); and a pilot structure comprising, above an extension of a second electrode region (4) of the second thyristor, a second P-type box (11) containing third and fourth N-type regions, the third region (12) and a portion of the second box (11) being connected to a gate terminal (G), the fourth region (13) being connected to the second region (8).
REFERENCES:
patent: 4994884 (1991-02-01), Kato et al.
patent: 5608235 (1997-03-01), Pezzani
patent: 5889374 (1999-03-01), Pezzani
patent: 6034381 (2000-03-01), Pezzani
patent: 6380565 (2002-04-01), Duclos et al.
patent: 2002/0053939 (2002-05-01), Pezzani
International Search Report from corresponding International Application No. PCT/FR02/04581, filed Dec. 27, 2002.
Erdem Frazli
Flynn Nathan J.
Jorgenson Lisa K.
Morris James H.
STMicroelectronics S.A.
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